Distributed feedback type semiconductor laser
文献类型：专利
| 作者 | WAKITA KOICHI |
| 发表日期 | 1986-09-08 |
| 专利号 | JP1986202487A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback type semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a good active layer by providing a substrate and a lattice matching superlattice layer in the intermediate between a diffraction grating and the active layer, thereby alleviating or reducing a crystal internal stress, crystal defect indispensably induced at crystal growth on the irregular surface of the grating. CONSTITUTION:A diffraction grating 100 is formed on an N-type InP clad layer (the first clad layer) 2 grown on an N-type InP substrate The period of the grating 100 is 4,670Angstrom when the secondary period is used, and the grating is repeatedly formed in the depth of 1,500Angstrom in (100) direction. The grating 10 is formed by an oscillation light of 4,250Angstrom of He-Cd gas laser by a 2-luminous flux interference exposing method. A photowaveguide layer 3 is formed on the grating 100, and a superlattice layer 4 is formed thereon. The layer 4 is used for a quantum well layer and a barrier layer of InGaAsP, InP or InGaAs and InAlAs. |
| 公开日期 | 1986-09-08 |
| 申请日期 | 1985-03-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83285]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | WAKITA KOICHI. Distributed feedback type semiconductor laser. JP1986202487A. 1986-09-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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