Semiconductor laser device
文献类型：专利
| 作者 | OTOSHI SO; UOMI KAZUHISA; NAKATSUKA SHINICHI; KAYANE NAOKI; KAJIMURA TAKASHI |
| 发表日期 | 1986-12-27 |
| 专利号 | JP1986296783A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable the change of the intensity of light of the title laser device by a method wherein two kinds of regions having different forbidden band width or the thickness of a quantum well layer are formed, thereby enabling to emit the light spot having two different wavelength with the controlled lateral mode of oscillation. CONSTITUTION:First, an active layer 3 of quantum well structure, an n-GaAlAs clad layer 4, and an n-GaAs layer are successively formed on an n-GaAs substrate 1 using an organic metal thermal decomposition vapor-phase growing method (MOCVD method). Then, a p-GaAs cap layer 6 and a Zn diffusion region 7 are formed by diffusion Zn on the n-GaAs layer and the clad layer 2 by performing a selective diffusion method. Subsequently, an n-electrode 8 is formed using a vapor-deposition method, and after an n-electrode is formed on the whole surface on the cap side, a stripe-like n-electrode 10 is formed by performing an etching. A p-electrode is formed on both sides of the electrode 10 using a vapor-deposition method and a lift-of method. Lastly, a groove 11 is provided by applying an etching to the p-electrode and the GaAs layer located on both sides of the n-electrode, and electrodes 9 and 10 are formed. |
| 公开日期 | 1986-12-27 |
| 申请日期 | 1985-06-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83286]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OTOSHI SO,UOMI KAZUHISA,NAKATSUKA SHINICHI,et al. Semiconductor laser device. JP1986296783A. 1986-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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