Semiconductor light emitting element
文献类型：专利
| 作者 | POORU DABURIYUU EE MAKUROI; KUROBE ATSUSHI; FURUYAMA HIDETO |
| 发表日期 | 1987-04-22 |
| 专利号 | JP1987088389A |
| 著作权人 | TOKYO SHIBAURA ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To lower an oscillating threshold current and to enhance quantum efficiency at the same time, by providing at least one of an N-type impurity doped layer, which is provided between a quantum well layer and a P-type clad layer in an active layer, and a P-type impurity doped layer which is provided between the quantum well layer and an N-type clad layer. CONSTITUTION:A P-type lightguide layer 42 is provided between a multiple quantum well layers 43 and an N type clad layer 3, and an N-type lightguide layer 45 is provided between the multiple quantum well layers 43 and a P clad layer 5. These impurity doped layer are operated as electric charge sheets. As a result, the internal electric field in the region of the multiple quantum well layers 43 in an active layer 4 is alleviated. Therefore, oscillating threshold current is decreased in comparison with that of a conventional structure. Owing to the decrease in oscillating threshold current, the quantum efficiency of a QW laser is enhanced. |
| 公开日期 | 1987-04-22 |
| 申请日期 | 1985-10-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83296]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | POORU DABURIYUU EE MAKUROI,KUROBE ATSUSHI,FURUYAMA HIDETO. Semiconductor light emitting element. JP1987088389A. 1987-04-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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