Semiconductor laser
文献类型：专利
| 作者 | MUKAI SEIJI; YAJIMA HIROYOSHI; WATANABE MASANOBU; ITO HIDEO |
| 发表日期 | 1986-10-21 |
| 专利号 | JP1986236190A |
| 著作权人 | 工業技術院長 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To make the two-dimensional switching of the radiated beam possible in the direction of scanning or diflection, by providing a electron density distribution in an active layer controlled by the electrode with the gradient not only in the direction of the plane parallel to the element substrate but also in the other directions. CONSTITUTION:On the P-type semiconductor substrate 101, the N-type semiconductor 102 is grown, on which the groove 102a for current injection is formed. The P-type semiconductor 103, the N-type semiconductors 104, 105 and 106, and the P-type semiconductors 107 and 108 are grown. After the insulation film 109 is formed, the grooves 109a for current injection is installed thereon, and the electrodes 101, 111 and 112 for current injection are formed. When the voltage is impressed between the electrodes 112 and 111, the current is injected from the groove 109a and the active region 113b emits light. On the other hand, when the voltage is impressed between the electrodes 110 and 111, the current is injected from the groove 109b, and the lower active region 113a emits light. As the injection currents into the active regions 113a and 113b can be independently controlled, the gradient of the injection current density between the active layers can be controlled. Thus, the deflection of beam occurs in the upper and lower directions in the semiconductor layers. |
| 公开日期 | 1986-10-21 |
| 申请日期 | 1985-04-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83300]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 工業技術院長 |
| 推荐引用方式 GB/T 7714 | MUKAI SEIJI,YAJIMA HIROYOSHI,WATANABE MASANOBU,et al. Semiconductor laser. JP1986236190A. 1986-10-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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