Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | ISSHIKI KUNIHIKO |
| 发表日期 | 1991-10-24 |
| 专利号 | JP1991238886A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To enable attainment of a semiconductor laser device which has no regenerative growth interface in an active region, by forming a ridge by etching, by forming a diffraction grating on a face in proximity to an active layer exposed and by making a crystal layer grow thereon by an MOCVD method. CONSTITUTION:A contact layer 7 is provided only on the top part of a first clad layer 6, and a diffraction grating 10 is formed on the surface of a guide layer being located on the opposite sides of the first clad layer 6 and not being in contact with this first clad layer 6. A second upper clad layer 8 of a first or second conductivity type being in contact with the diffraction grating 10 and having about the same composition as the first upper clad layer 6 is provided, and a current block layer 9 of a first conductivity type being in contact with this second upper clad layer 8 and having a forbidden band width being the same with or smaller than one of an active layer 3 is provided. According to this constitution, a semiconductor laser device having no recrystallization interface in an active region and being provided with the active layer 3 being flat is obtained. |
| 公开日期 | 1991-10-24 |
| 申请日期 | 1990-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83301]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ISSHIKI KUNIHIKO. Semiconductor laser device and manufacture thereof. JP1991238886A. 1991-10-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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