半導体レーザ素子
文献类型：专利
| 作者 | 山下 茂雄; 河野 敏弘; 梶村 俊 |
| 发表日期 | 1997-08-15 |
| 专利号 | JP2685499B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子 |
| 英文摘要 | PURPOSE:To enable the reduction of a leakage current in a lateral direction by a method wherein a region of a clad layer other than a current injection region is formed of a multilayer structure and a reverse bias is applied onto the region while an element is in operation. CONSTITUTION:Concerning a clad layer 7 formed on a side opposite to a substrate 1 on the basis of an active layer 3, the region of the clad layer 7 other than a central current injection section is formed of a multilayer structure and a reverse bias applied inside the clad layer 7 while an element is in operation. That is, a part of the clad layer 7 is formed of a material whose conductivity type is opposite to that of a clad layer 4 in contact with the part so as to serve as a current constriction layer. Therefore, a reversely biased barrier is formed in the clad layer 7 other than the current injection section when the semiconductor laser is normally biased. By these processes, a current leakage in a lateral direction can be reduced, so that a semiconductor laser element with a low threshold current can be realized. |
| 公开日期 | 1997-12-03 |
| 申请日期 | 1988-06-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83305]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 山下 茂雄,河野 敏弘,梶村 俊. 半導体レーザ素子. JP2685499B2. 1997-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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