Superlattice semiconductor laser
文献类型：专利
| 作者 | FUJIWARA KENZO |
| 发表日期 | 1990-08-21 |
| 专利号 | JP1990209781A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Superlattice semiconductor laser |
| 英文摘要 | PURPOSE:To move energy of a current from an electron implanted layer of an N-type semiconductor to a quantum wall active layer by providing the electron implanted layer made of quantum well or a superlattice layer having conduction band base quantum level energy resonant with conduction band high order subband quantum level energy of semiconductor. CONSTITUTION:A superlattice or quantum well structure is used as part or all of an active layer and a clad layer, conduction band high order subband level (e.g. n=2 quantum level) energy of semiconductor for forming the active layer coincides with conduction band base quantum level (n=1) energy of semiconductor for composing a clad layer to form a resonance level. The active layer is doped in P-type, and holes are always in the active layer. Thus, since the electron implanted layer made of the quantum well or superlattice having conduction band base quantum level energy resonator the conduction band high order subband level energy of semiconductor for composing P-type doped quantum well or superlattice active layer is provided, electrons can be implanted at a high speed efficiently to the active layer and the holes exist in the active layer. Accordingly, light emitting response can be improved. |
| 公开日期 | 1990-08-21 |
| 申请日期 | 1989-02-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83306]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | FUJIWARA KENZO. Superlattice semiconductor laser. JP1990209781A. 1990-08-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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