Method for liquid-phase epitaxial growth
文献类型：专利
| 作者 | OKAZAKI JIROU |
| 发表日期 | 1984-04-07 |
| 专利号 | JP1984061127A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for liquid-phase epitaxial growth |
| 英文摘要 | PURPOSE:To perform a liquid-phase epitaxial growth on the crystal substrate having the face 11 as a cut surface by a method wherein a parallelogram crystal substrate having a specific interior angle is used as the substrate to be processed, and a slding type boat formed almost in one body with a substrate holding part and a solution reservoir is formed. CONSTITUTION:As the face 110, which is the shear face of the wafer having the face 111 as a cut surface, has the crossing angle of 60 deg., it can be easily cut into the configuration as shown in the diagram by utilizing its shearability. Accordingly, the crystal substrate 11 to be used for epitaxial growth is cut utilizing its shearability, and the substrate providing part of a sliding type boat and a solution reservoir are made into the shape fitting to the above. Also, the substrate holding part 10 provided on the substrate holding block 3 and a plurality of growing solution reservoirs 13 provided on a growing solution holding block 4 are formed almost in one body with the crystal substrate 11, and an epitaxial growth is performed entirely in the same manner as before. In such a case as above where the crystal substrate 11 formed by utilizing shearability is used, a cutting work can be performed easily, no defect is generated on the surface of the substrate, and the chippings and the like generating on the substrate can be prevented. |
| 公开日期 | 1984-04-07 |
| 申请日期 | 1982-09-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83311]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | OKAZAKI JIROU. Method for liquid-phase epitaxial growth. JP1984061127A. 1984-04-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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