Semiconductor device and manufacturing method thereof
文献类型：专利
| 作者 | TAKADA, KAN; AOKI, OSAMU; YAMAMOTO, TSUYOSHI |
| 发表日期 | 2006-09-21 |
| 专利号 | US20060209914A1 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and manufacturing method thereof |
| 英文摘要 | In order to reduce the parasitic capacitance of the device and obtain an enhanced high-speed response characteristic while assuring the reliability of the device, a semiconductor device is provided such that it comprises: a mesa structure formed on a semiconductor substrate and including a first cladding layer, an active layer, a second cladding layer, a first protective layer and a second protective layer each covering respective side of the active layer, and a cap layer formed between the first protective layer and the second protective layer and covering the top surface of the active layer, wherein aluminum is included only in the active layer; and a buried layer for burying the mesa structure, wherein the first cladding layer, the first protective layer, the second protective layer, and the second cladding layer constitute the side of the mesa structure. |
| 公开日期 | 2006-09-21 |
| 申请日期 | 2005-10-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83312]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | TAKADA, KAN,AOKI, OSAMU,YAMAMOTO, TSUYOSHI. Semiconductor device and manufacturing method thereof. US20060209914A1. 2006-09-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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