Buried-type semiconductor laser
文献类型：专利
| 作者 | OKAI MAKOTO; UOMI KAZUHISA; TSUJI SHINJI; KAYANE NAOKI; HARADA KAZUHIDE |
| 发表日期 | 1989-05-02 |
| 专利号 | JP1989114092A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried-type semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which facilitates extra-high speed modulation not lower than 20 GHz and has a high life reliability by a method werein the width of a burying layer outside a stripe is made to be 0mum or less and a parasitic capacitance is significantly reduced. CONSTITUTION:After a light guide layer 2, an undoped active layer 3, a buffer layer 4 and a p-type InP cladding layer 5 are successively built up on the surface of a substrate 1 by liquid growth, a mesa stripe 13 in which the active layer 3 with a width about 1mum is left is formed. After that, burying layers 6 and 7 are built up on both the sides of the mesa stripe 13 by liquid growth to form current blocking layers and a p-type InP cladding layer 8 and a p-type cap layer 9 are built up over the whole surface by liquid growth. Then electrodes 10 and 11 are formed on the upper and lower surfaces by evaporation. Then approximately vertical trenches 14 are formed near both the sides of the active layer by a method such as reactive ion etching with halogen system gas to reduce a parasitic capacitance to the extent of 1-3 pF. |
| 公开日期 | 1989-05-02 |
| 申请日期 | 1987-10-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83313]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OKAI MAKOTO,UOMI KAZUHISA,TSUJI SHINJI,et al. Buried-type semiconductor laser. JP1989114092A. 1989-05-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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