Semiconductor laser device
文献类型：专利
| 作者 | OOTOSHI SOU; KAYANE NAOKI; KAJIMURA TAKASHI |
| 发表日期 | 1985-08-30 |
| 专利号 | JP1985167488A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain the titled device of high-output and high-reliability oscillating on stable basic lateral modes also during high output action by a method wherein a semiconductor layer of the second conductivity type is provided on a semiconductor substrate of the first conductivity type having a mesa stripe, and thereafter two mesa stripes are formed. CONSTITUTION:A mesa stripe 10-2 is formed on the P-GaAs substrate 1-1, and N-GaAs 2 is grown so that the surface may become flat. Next, the two mesa stripes 10-3 are formed in such a manner that a groove 7 is present above the mesa stripe 10-2 on the substrate 1- Then, a P-GaAlAs clad layer 3, a GaAlAs active layer 4, an N-GaAlAs clad layer 5, and an N-GaAs cap layer 6 are successively grown. In this structure, inner current stricture is realized by a current stricture layer 2, and current flows in concentration to the light emitting region. Besides, a double hetero structure is formed on the two mesa stripes 10-3; therefore, an active layer 4 excellent in crystallinity and composition uniformity can be grown with good reproducibility. |
| 公开日期 | 1985-08-30 |
| 申请日期 | 1984-02-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83321]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | OOTOSHI SOU,KAYANE NAOKI,KAJIMURA TAKASHI. Semiconductor laser device. JP1985167488A. 1985-08-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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