Semiconductor laser device
文献类型：专利
| 作者 | SHIGE NORIYUKI; ONDA HIDEYA |
| 发表日期 | 1982-11-30 |
| 专利号 | JP1982194589A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve the reliability of the semiconductor laser element espacially the visible photo laser element by a method wherein the Ga1-xAlxAs (X is crystal mixing ratio) substrate is substituted for the GaAs substrate to be epitaxially grown. CONSTITUTION:In general, the GaAs/GaAs base double hetero constituted laser element makes n-GaAlAs layer 2, active layer 3, p-GaAlAs layer 4 and p-GaAlAs layer 5 epitaxially grow on n-GaAs substrate 1 and provides the bottom surface of the substrate with the negative electrode 6 and the upper surface of the GaAs layer with the positive electrode 7. Then in order to extend the life of element, Ga1-xAlxAs substrate is adopted as the substrate and the reliability may be remarkably improved by application of the visible photo laser exceeding 780nm by means of epitaxially growing at least n or p-GaAlAs, active layer and p or n-GaAlAs on the substrate specifying the range of the crystal mixing ratio to be 0.01-0.05. |
| 公开日期 | 1982-11-30 |
| 申请日期 | 1981-05-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83329]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SHIGE NORIYUKI,ONDA HIDEYA. Semiconductor laser device. JP1982194589A. 1982-11-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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