Semiconductor laser device
文献类型：专利
| 作者 | SEKO YASUJI |
| 发表日期 | 1991-11-18 |
| 专利号 | JP1991257887A |
| 著作权人 | FUJI XEROX CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To elevate luminous efficiency and enlarge the selectability of oscillating wavelength by constituting it of a clad layer, consisting of a semiconductor layer which has distorted superlattice structure free of lattice defect being made of plural semiconductor material layers whose lattice constants are different, and an active layer, consisting of a semiconductor layer where lattices are conformed consisting of a single semiconductor material layer or plural semiconductor material layers whose lattice constants are the same. CONSTITUTION:A semiconductor material, which has a band width Eg and a lattice constant same as the lattice constant of a clad layer 21, is stacked on the clad layer 21, which has the semiconductor materials of Eg1 and Eg2 in band widths and mutually different in lattice constant being stacked repeatedly on a single crystal substrate 1 thereby having a distorted superlattice structure, so as to form an active layer 3 wherein the lattices are matched. Furthermore, a clad layer, wherein semiconductor materials having band widths Eg2 and Eg1 and mutually different lattice constants are stacked repeatedly on the active layer 3 and which has distorted superlattice structure, and a cap layer 4 are stacked to constitute the primary part. |
| 公开日期 | 1991-11-18 |
| 申请日期 | 1990-03-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83332]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJI XEROX CO LTD |
| 推荐引用方式 GB/T 7714 | SEKO YASUJI. Semiconductor laser device. JP1991257887A. 1991-11-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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