Semiconductor light emitting device
文献类型：专利
| 作者 | OGITA SHOICHI |
| 发表日期 | 1990-12-19 |
| 专利号 | JP1990305488A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To make a semiconductor light emitting device of this design large in change of oscillation frequency to the change of a phase control current and to prevent it from varying much in properties of oscillation light. CONSTITUTION:Phase adjusting regions 16a-16c different from each other in thickness and width are provided to two or more parts of an active layer 8 and/or an optical guide layer 6, and two or more phase adjusting electrodes 24a-24c are provided to a first clad layer 12 in contact with the active layer 8 corresponding to the phase adjusting regions 16a-16c. Therefore, even if an injection current is decreased in volume per phase adjusting electrode, oscillation frequencies can be made large in change as a whole. As injection current can be made small in quantity per phase adjusting electrode, oscillation light can be made small in variation. By this setup, the change of oscillation frequencies can be made large to the change of a phase control current, and a modulated wave excellent in quality can be obtained without varying oscillation light in properties. |
| 公开日期 | 1990-12-19 |
| 申请日期 | 1989-05-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83333]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | OGITA SHOICHI. Semiconductor light emitting device. JP1990305488A. 1990-12-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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