Semiconductor device
文献类型：专利
| 作者 | YAMAZAKI KOJI |
| 发表日期 | 1989-09-29 |
| 专利号 | JP1989245526A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To enable an epitaxial depositing film in high quality to be formed on insulating films by a method wherein the insulating films laid between laminated structures of at least two semiconductor elements are formed of II-VI group compound semiconductors. CONSTITUTION:A semiconductor device is formed into a transistor on a semiconductor laser. For example, a clad layer 2 comprising n type conductive Al0.4Ga0.6 As is laminated on an n type GaAs substrate First, e.g., an active layer 3 comprising Al0.15Ga0.85As, a clad layer 4 comprising p type Al0.4Ga0.6As are successively laminated. Secondly, a GaAs FET layer 6 is epitaxially deposited through the intermediary of a ZnSe thin film 5 in high specific resistance and then electrodes 7 are mounted on the film 6. Through these procedures, at least exceeding two semiconductor elements are laminated through the intermediary of the insulating films formed of II-VI compound semiconductors. Thus, the GaAs in the FET layer 6 can be assured of less lattice mismatching, high quality and less leakage current. |
| 公开日期 | 1989-09-29 |
| 申请日期 | 1988-03-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83334]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | YAMAZAKI KOJI. Semiconductor device. JP1989245526A. 1989-09-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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