Liquid-phase epitaxial growing method
文献类型：专利
| 作者 | NAKAI SABUROU |
| 发表日期 | 1982-12-02 |
| 专利号 | JP1982196526A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid-phase epitaxial growing method |
| 英文摘要 | PURPOSE:To make no excessive growing solution remain on the surface of a growing layer by using a fixed quantity of growing solution for a unit area of a substrate without applying any pressure to the growing solution. CONSTITUTION:A substrate 3 is arranged on a fixed member 1 and a slider 2 is provided with growing solution reservoirs 4, 5 and 6 wherein growing solutions 7, 8 and 9 amounting to 8g per one square sentimeter are held respectively. Convers 12, 13 and 14 are set thereon. These covers are separated from the growing solutions, and three thin-film semiconductor layers are grown epitaxially in continuation by moving the slider 2 sequentially by operating rods 10 and 1 In this way, the growing solutions are made to expand surely onto the whole substrate and thus an epitaxial growth film of excellent quality can be prepared. |
| 公开日期 | 1982-12-02 |
| 申请日期 | 1981-05-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83335]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | NAKAI SABUROU. Liquid-phase epitaxial growing method. JP1982196526A. 1982-12-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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