Manufacture of semiconductor laser
文献类型：专利
| 作者 | USHIJIMA ICHIRO; GOTO HIROSHI |
| 发表日期 | 1988-04-08 |
| 专利号 | JP1988078588A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To inhibit crystallizability from deteriorating and to improve the characteristics of a semiconductor laser by a method wherein a guide layer is formed after solution of the same solid phase composition as that of the guide layer and of a small supersaturation is passed through on the surface of the diffraction grating of the InP substrate of the distributed-feedback type semiconductor laser. CONSTITUTION:In a continuous liquid phase epitaxial growing device, an N-type InGaAsP guide layer 3, an undoped InGaAsP active layer 4 and a P-type InP layer 5a are formed in order on an InP substrate At this time, an InGaAsP solution of the same solid phase composition as that of the guide layer 3 is brought into contact with and made to pass on the InP substrate 1, that is, the rough surface 2 of the diffraction grating of the substrate, at a subcooling degree of 3 deg.C before the InGaAsP guide layer is formed. At this time, if the InP substrate 1 is held at a growth starting temperature of 600 deg.C, the meltback of the InP substrate is not generated by the passing of this InGaAsP solution and there is not the precipitation of an InGaAsP crystal as well. Thereby, the factors of bad effect in the rough surface of the diffraction grating can be considerably eliminated, the crystal of such a semiconductor laser as an InGaAsP layer which is formed on the InP substrate is improved and the characteristics of a semiconductor laser are improved. |
| 公开日期 | 1988-04-08 |
| 申请日期 | 1986-09-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83336]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | USHIJIMA ICHIRO,GOTO HIROSHI. Manufacture of semiconductor laser. JP1988078588A. 1988-04-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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