Semiconductor light emitting device
文献类型：专利
| 作者 | KONDO MASATO |
| 发表日期 | 1989-10-20 |
| 专利号 | JP1989264287A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To prevent the lowering of light emitting efficiency and lessen threshold current density, by inserting a layer having a forbidden band width that is larger than that of a clad layer as a barrier layer between an active layer and the clad layer. CONSTITUTION:After forming a laminating structure consisting of: a buffer layer 2, a first clad layer 3 of one conductivity type, a first barrier layer 4 of the conductivity type, an active layer 5, second barrier layer 6 of the opposite conductive type, a second clad layer 7 of the opposite conductive type on a semiconductor substrate 1, a semiconductor light emitting device covers the upper surface of the second clad layer 7 with an insulating layer 8 and forms an electrode 9 by providing a window in the electrode part. Then, another electrode 10 is formed below the semiconductor substrate A forbidden band width of the first barrier layer 4 is larger than that of the first clad layer 3 and the forbidden band width of the second barrier layer 6 is larger than that of the second clad layer 7. This configuration hinders the overflow of carriers from the active layer 5 to the first and second clad layers 3 and 7 and then, not only improves light emitting efficiency but also lessens the threshold current density. |
| 公开日期 | 1989-10-20 |
| 申请日期 | 1988-04-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83339]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KONDO MASATO. Semiconductor light emitting device. JP1989264287A. 1989-10-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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