Manufacture of semiconductor laser
文献类型：专利
| 作者 | NISHIMURA TAKAYUKI |
| 发表日期 | 1988-01-07 |
| 专利号 | JP1988002395A |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a surface emission type semiconductor laser, threshold currents of which are lowered largely and the spread of outgoing laser beams of which is inhibited, by forming an inverted truncated cone-shaped hole extending over a current block layer, an etching stopping layer and the surface layer section of a substrate, shaping a semiconductor lower clad layer onto the block layer and into the hole and laminating and forming a semiconductor active layer and a semiconductor upper clad layer onto the clad layer in succession. CONSTITUTION:A semiconductor etching stop layer 2 and a current block layer 3 are shaped onto a P-type GaAs substrate 1, an etching mask is formed onto the block layer 3, leaving a circular opening at a central section, and an inverted truncated cone-shaped hole 4 is shaped through etching. A semiconductor lower clad layer 5 is formed onto the block layer 3 and into the hole 4. A semiconductor active layer 6, a semiconductor upper clad layer 7 and a cap layer 8 are laminated and shaped onto the lower clad layer 5 in succession. An upper window hole 13 is shaped to the cap layer 8 exposed to a circular hole 11 while a truncated cone-shaped lower window hole 14 is formed to the back of the hole 4 in the substrate 1 exposed to a circular hole 12. An upper reflecting film 15 and a lower reflecting film 16 are formed. |
| 公开日期 | 1988-01-07 |
| 申请日期 | 1986-06-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83342]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | NISHIMURA TAKAYUKI. Manufacture of semiconductor laser. JP1988002395A. 1988-01-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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