Semiconductor laser diode
文献类型：专利
| 作者 | OHKUBO, MICHIO |
| 发表日期 | 2003-12-23 |
| 专利号 | US6668001 |
| 著作权人 | FURUKAWA ELECTRIC CO. LTD., THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser diode |
| 英文摘要 | A semiconductor laser diode including: a resonator structure including a first facet having a reflection film and a second facet having an antireflection film; and an active region including a linear section a uniform width extending from the first facet along a direction of the resonator and a flared section extending from the linear section toward the second facet, the flared section having a tapered width increasing toward the second facet, wherein the relation of d} holds. The semiconductor laser diode which emits in a stabled fundamental mode can be realized by satisfying the above relation for increasing the effect for suppressing the spatial hole-burning phenomenon. |
| 公开日期 | 2003-12-23 |
| 申请日期 | 2001-08-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83347]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO. LTD., THE |
| 推荐引用方式 GB/T 7714 | OHKUBO, MICHIO. Semiconductor laser diode. US6668001. 2003-12-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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