Manufacture of semiconductor laser
文献类型：专利
| 作者 | UENO YOSHIYASU |
| 发表日期 | 1991-08-12 |
| 专利号 | JP1991184390A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To improve an optical damage level on a laser resonator end surface by constructing a semiconductor laser with a window region including a pair of laser resonator end surfaces and an excitation region. CONSTITUTION:A multi-layer film (DH wafer) including a double hererostructure from an n-GaAs substrate 1 to an n-GaAs non-doping block layer 10 is successively grown by the first epitaxial growth process, and then on the resulting DH wafer an excitation region 21 and an index type optical waveguide are formed by a photolithography and a wet etching process. Thereafter, SiO2 on the DH wafer in which the window region 20 and the index type optical waveguide are formed by the wet process is taken as a mask, and in the second crystal growth process an n-GaAs block layer 8 is selectively grown on both sides of a striped p-AlGaInP outer cladding layer, a p-GaInP hereto buffer layer 7, and the n-GaAs non-doping block layer 10. Further, the SiO2 mask is removed and a p-GaAs contact layer 9 is grown over the entire surface of the wafer third crystal growth. |
| 公开日期 | 1991-08-12 |
| 申请日期 | 1989-12-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83350]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | UENO YOSHIYASU. Manufacture of semiconductor laser. JP1991184390A. 1991-08-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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