Distributed feedback semiconductor laser
文献类型：专利
| 作者 | KASUKAWA AKIHIKO; KASHIWA SUSUMU |
| 发表日期 | 1988-04-04 |
| 专利号 | JP1988073683A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback semiconductor laser |
| 英文摘要 | PURPOSE:To be able to manufacture a distributed feedback semiconductor laser by an MOCVD method and to obtain the laser which can sufficiently perform a signal longitudinal and lateral mode operations with low threshold value by providing a waveguide layer formed on a current blocking layer with a smaller refractive index than that of an active layer and a second conductive type clad layer formed on the waveguide layer. CONSTITUTION:An etching stop layer 14 made of p-type GaInAsP (lambdag=1mum), a current blocking layer 15 made of an n-type Inp, and a current blocking layer 16 are sequentially laminated on an intermediate layer 13. A waveguide layer 17 made of a p-type GaInAsP (lambdag=1mum) is formed on a refractive index and the layer 16 exposed by a channel. A clad layer 18 made of a p-type InP by a series of growing process, and a cap layer 19 made of a p-type GaInAsP (lambdag=3mum) are sequentially laminated on the layer 17. A refractive index difference occurs between the inside the channel and the part except the inside, and a stable basic lateral mode operation can be achieved. Further, since the layers 15, 16 are disposed therein, it can be operated with low threshold current. |
| 公开日期 | 1988-04-04 |
| 申请日期 | 1986-09-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83352]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | KASUKAWA AKIHIKO,KASHIWA SUSUMU. Distributed feedback semiconductor laser. JP1988073683A. 1988-04-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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