Laser diode
文献类型：专利
| 作者 | MATSUBARA HIROSHI; MURAKAMI TAKASHI; YAMAWAKI TAKESHI; TAKAMIYA SABURO |
| 发表日期 | 1986-04-11 |
| 专利号 | JP1986070784A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Laser diode |
| 英文摘要 | PURPOSE:To obtain a laser diode having a symmetrical type far field pattern, a stable transverse mode and a small astigmatic difference by symmetrizing the distribution of a refractive index in the transverse direction. CONSTITUTION:When forward bias voltage is applied between electrodes 29, 30, currents are easy to flow through a hetero-junction between an n type AlxGa1-xAs layer 23 and a p type GaAs layer 24 more than a homo-junction between the n type AlxGa1-xAs layer 23 and a p type diffusion layer 27, thus concentrating currents to the striped p type GaAs layer 24. Regarding an optical waveguide, there is a difference between refractive indices by a P type AlxGa1-xAs layer 25-p type GaAs layer 24-n type AlxGa1-xAs layer 23 and an Al concentration difference in the vertical direction. There is a difference of the p type diffusion layer 27-p type GaAs layer 24-p type diffusion layer 27 in the transverse direction, and a symmetrical type is formed. |
| 公开日期 | 1986-04-11 |
| 申请日期 | 1984-09-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83356]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MATSUBARA HIROSHI,MURAKAMI TAKASHI,YAMAWAKI TAKESHI,et al. Laser diode. JP1986070784A. 1986-04-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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