半導体レーザ素子
文献类型：专利
| 作者 | 田中 俊明; 河野 敏弘; 梶村 俊; 小野 佑一 |
| 发表日期 | 1997-11-28 |
| 专利号 | JP2723924B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子 |
| 英文摘要 | PURPOSE:To decrease a self-excited oscillation frequency by a method wherein the thickness and the width of a multi-quantum well layer are specified and the well layer is doped with a n-type impurity. CONSTITUTION:The following are successively formed in lamination on a substrate 1: a buffer layer 2; a clad layer 3; a multi quantum well structure active layer 4'; a clad layer 5; a current constricting layer 7; and a buried layer 8. The adequate thickness and well width of the active layer 4, are 0.05-0.09mum and 5-20nm respectively. Here, the active layer 4, is doped with n-type impurity Se, and a quantum barrier. layer 5 and a quantum well layer 4 are repeatedly and uniformly doped with also n-type impurity Se. If the active layer 4' is doped as mentioned above, electrons contributing the recombination luminescence can be supplied without the injection of carriers, and the gain can be obtained throughout a wide energy region. In result, a self excited oscillation frequency can be decreased. |
| 公开日期 | 1998-03-09 |
| 申请日期 | 1988-09-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83361]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 田中 俊明,河野 敏弘,梶村 俊,等. 半導体レーザ素子. JP2723924B2. 1997-11-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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