Quantum well semiconductor laser element
文献类型：专利
| 作者 | KASUKAWA AKIHIKO; YUKITANI TAKESHI; MATSUMOTO SHIGETO; OKAMOTO HIROSHI |
| 发表日期 | 1992-04-21 |
| 专利号 | JP1992120786A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Quantum well semiconductor laser element |
| 英文摘要 | PURPOSE:To perform a high output operation having a circular irradiating beam without increasing a threshold current by setting the length of a resonator to a special value or more without increasing the forbidden band width of a confinement layer from that of a quantum well layer. CONSTITUTION:The forbidden band width of confinement layer is increased 160meV or more from the forbidden band width of a quantum well layer. Experimentally, when the length of a resonator is about 900mum, its threshold current becomes minimum, and even if the length of the resonator is increased to more than that, its quantum efficiency is hardly varied, and hence the length of the resonator is set to 900mum or more. An n-type InP clad layer 20, a nondoped GaInAs confinement layer 30 stepwise varied in its forbidden band width, a quantum well active layer 40 made of a nondoped GalnAs quantum well layer 50 and a nondoped GaInAsP barrier layer 60, a nondoped GaInAsP confinement layer 70 stepwise varied in its forbidden band width, a p-type InP clad layer 80 and a p-type InAsP contact layer 90 are continuously grown on a n-type InP substrate 1 |
| 公开日期 | 1992-04-21 |
| 申请日期 | 1990-09-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83362]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | KASUKAWA AKIHIKO,YUKITANI TAKESHI,MATSUMOTO SHIGETO,et al. Quantum well semiconductor laser element. JP1992120786A. 1992-04-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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