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文献类型：专利
| 作者 | TANAKA HARUO; MUSHIGAMI MASAHITO; NAKADA NAOTARO |
| 发表日期 | 1989-01-09 |
| 专利号 | JP1989000835B2 |
| 著作权人 | ROHM KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To improve electrical properties and optical properties by a method wherein a stripe groove which reaches the depth where the surface of a protection layer is exposed and has a tapered surface is formed in the first grown layer along the wavelength of a laser resonator and the second grown layer, constituted by the second upper clad layer opposite in conductive type to the substrate and a cap layer, is laminated on the first grown layer. CONSTITUTION:A semiconductor laser 1 is constituted by an N-type GaAs substrate 10, an N-type AlxGa1-xAs (wherein x=0.55) lower clad layer 21, an AlxGa1-xAs (wherein x=0.12) activation layer 22, the first P-type AlxGa1-xAs (wherein x=0.55) upper clad layer 23, a P-type GaAs protection layer 24, an N-type GaAs current limiting layer 25, the second P-type AlyGa1-yAs (wherein y=0.55) upper clad layer 41, a P type GaAs cap layer 42, a P-type electrode 50 and an N-type electrode 5 The film thickness of the protection layer 24 is so determined as to have a band gap equal to or wider than that of the activation layer 22. The second grown layer 40 is laminated above the first grown layer 20 in cave-in shape corresponding to the shape of a stripe groove 30. |
| 公开日期 | 1989-01-09 |
| 申请日期 | 1984-12-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83365]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM KK |
| 推荐引用方式 GB/T 7714 | TANAKA HARUO,MUSHIGAMI MASAHITO,NAKADA NAOTARO. -. JP1989000835B2. 1989-01-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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