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文献类型：专利
| 作者 | IMANAKA KOICHI; HORIKAWA HIDEAKI; KAWAI YOSHIO |
| 发表日期 | 1991-01-08 |
| 专利号 | JP1991000796B2 |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To control the width of an active layer with good reproducibility and the ohmic contact with an electrode by utilizing side etching is easily made available. CONSTITUTION:After a P type clad layer 13 of InP, etc., the active layer 14 of InGaAsP, etc., and an N type clad layer 15 of InP, etc. are formed successively on a substrate 12, the clad layer 15 is etched with an insulator 20 as the mask, and thus the active layer 14 is exposed. Next, the exposed part of the active layer 14 is etched with sulfuric acid etchant, etc., and the active layer 14 is left to a narrow width under the clad layer 15 by performing the side etching of the active layer 14. Then, the clad layer 13 and the substrate 12 are etched to the width direction with chloric acid etchant, etc. with the remaining active layer 14 as the mask, and accordingly the vertical part 19 of the clad layer 13 is formed. Thereafter, an N type block layer 16 and a P type enclosed layer 17 which cover the remaining clad layer and the remaining active layer are formed, and electrodes 11 and 18 are provided. |
| 公开日期 | 1991-01-08 |
| 申请日期 | 1982-08-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83375]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | IMANAKA KOICHI,HORIKAWA HIDEAKI,KAWAI YOSHIO. -. JP1991000796B2. 1991-01-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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