Manufacture of semiconductor laser device
文献类型：专利
| 作者 | KONO MASAKI |
| 发表日期 | 1990-04-26 |
| 专利号 | JP1990114585A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To easily form a stripe-shaped groove and to enhance a uniformity of a characteristic by a method wherein a second meltback layer is formed in a second crystal growth process. CONSTITUTION:A first clad layer 2, an active layer 3, a second clad layer 4, a first meltback layer 5 of a p-GaAs and an AluGa1-uAs current-blocking layer 6 are grown epitaxially on a substrate 1 in a first crystal growth operation; after that, one part of the current-blocking layer 6 is etched. Then, a resist is removed; after that, a second meltback layer 13 of p-GaAs is grown epitaxially on the whole surface; after that, the second meltback layer 13 and the first meltback layer 5 existing at the bottom of a stripe-shaped groove 11 are melted back and removed; the stripe-shaped groove 11 is completed. Since a composition of the current-blocking layer 6 is largely different from that of the meltback layer 5, controllability of a shape of the stripe-shaped groove 11 is enhanced when a proper etching operation is used. Thereby, the shape of the stripe-shaped groove 11 can be controlled easily; a uniformity of a characteristic of a laser is enhanced. |
| 公开日期 | 1990-04-26 |
| 申请日期 | 1988-10-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83379]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KONO MASAKI. Manufacture of semiconductor laser device. JP1990114585A. 1990-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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