Manufacture of semiconductor device
文献类型：专利
| 作者 | SHIMADA KATSUTO |
| 发表日期 | 1992-07-03 |
| 专利号 | JP1992186816A |
| 著作权人 | セイコーエプソン株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To enable the photolithographic process to be performed avoiding the occurrence of cracking and breakage on a thin substrate wherein such defectives are apt to occur by a method wherein a supporting substrate is coated with a first photoresist so as to arrange a semiconductor thereon and then the whole surface is coated with a second photoresist to be exposed and developed later. CONSTITUTION:The title manufacture of semiconductor device drawing a pattern on a semiconductor substrate 101 by exposure is composed of the processes mentioned as follows i.e., the coating process of the reinforcement supporting substrate 103 with a first photoresist 104; the arrangement process of the semiconductor 101 on the supporting substrate 103 coated with the first photoresist 104; and the formation process of a photoresist pattern by coating the supporting substrate 103 including the semiconductor substrate 101 with a second photoresist 102 to be exposed and developed later. For example, the supporting substrate 103 is coated with the first photoresist 104 and after baking step, the semiconductor laser substrate 101 is mounted on the central part and then the whole surface is coated with the second photoresist 102 to be baked later. Finally, the whole surface is exposed and developed to be patterned for solder lifting off step. |
| 公开日期 | 1992-07-03 |
| 申请日期 | 1990-11-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83381]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | セイコーエプソン株式会社 |
| 推荐引用方式 GB/T 7714 | SHIMADA KATSUTO. Manufacture of semiconductor device. JP1992186816A. 1992-07-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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