Semiconductor laser element
文献类型：专利
| 作者 | OKUBO NORIO; KIKUTA TOSHIO |
| 发表日期 | 1992-09-02 |
| 专利号 | JP1992246879A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To enable a semiconductor laser element of lmum band where an active layer of InGaAs quantum well structure is used to be elongated in service life by a method wherein the end face near the active layer is restrained from being oxidized. CONSTITUTION:An InGaP clad layer 3, light trapping layers 4a and 4b, an active layer 5 of InGaAs quantum well structure, light trapping layers 4b and 4a, and an InGaP clad layer 6 are successively laminated on a GaAs substrate 1 to constitute a semiconductor laser element, where the light trapping layers 4a and 4b are formed of InGaAs P. |
| 公开日期 | 1992-09-02 |
| 申请日期 | 1991-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83382]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | OKUBO NORIO,KIKUTA TOSHIO. Semiconductor laser element. JP1992246879A. 1992-09-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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