Manufacture of semiconductor laser diode
文献类型：专利
| 作者 | TAKESHITA TATSUYA; KOGURE OSAMU |
| 发表日期 | 1990-03-01 |
| 专利号 | JP1990062089A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser diode |
| 英文摘要 | PURPOSE:To easily form a fine contact for eliminating variations of laser characteristics by selectively etching only a ridge apex utilizing a difference between film thicknesses of polymer. CONSTITUTION:After a substrate layer 12 and a ridge layer 13 are formed, a silicon nitride film 11 as an insulating film is formed. A resist 14 is formed on a silicon film 11 by a spin coating technique and the like. The resist 14 is etched uniformly over the entire surface using reactive ion etching. The film thickness of the resist 14 on the upper surface of the ridge layer 13 is thin with respect to a flat surface so that the resist 14 on the upper surface of the ridge layer 13 is selectively removed and the silicon film 11 is etched highly accurately. Hereby, a fine contact is easily formed to eliminate the variations of laser characteristics. |
| 公开日期 | 1990-03-01 |
| 申请日期 | 1988-08-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83385]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | TAKESHITA TATSUYA,KOGURE OSAMU. Manufacture of semiconductor laser diode. JP1990062089A. 1990-03-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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