Variable wavelength semiconductor laser
文献类型：专利
| 作者 | INOUE NAOHISA; MORI KAZUHIKO; MATANO MASAHARU; YAMASHITA MAKI |
| 发表日期 | 1983-06-07 |
| 专利号 | JP1983095887A |
| 著作权人 | TATEISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Variable wavelength semiconductor laser |
| 英文摘要 | PURPOSE:To perform stable single longitudinal mode oscillation and to vary the oscilating wavelength, by forming a diffraction grating on a thin film having an electrooptical effect, which is formed on a light confining layer, and controlling a voltage, which is applied to a pair of electrodes provided at the positions between which said diffraction grating is located. CONSTITUTION:On a semiconductor laser, e.g. an n-GaAs single crystal substrate 1 of a double heterostructured laser diode, an n-Ga1-xAlxAs layer 2, a p-GaAs layer 3, a p-Ga1-xAlxAs layer 4, a p-GaAs layer are grown by using a liquid phase epitaxial technology. The periodic differaction grating 8 is formed on said layer 3. The opposing electrodes 9 are further provided on both sides of the diffraction grating 8 on the layer 3. When the voltage applied to said electrodes is varied, the wavelength oscillated by the laser can be varied. |
| 公开日期 | 1983-06-07 |
| 申请日期 | 1981-12-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83391]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TATEISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | INOUE NAOHISA,MORI KAZUHIKO,MATANO MASAHARU,et al. Variable wavelength semiconductor laser. JP1983095887A. 1983-06-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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