面発光型半導体レーザ装置
文献类型：专利
| 作者 | 伊賀 健一; 石川 徹; 古沢 浩太郎; 茨木 晃 |
| 发表日期 | 1997-11-14 |
| 专利号 | JP2717213B2 |
| 著作权人 | 科学技術振興事業団 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 面発光型半導体レーザ装置 |
| 英文摘要 | PURPOSE:To reduce a contact resistance and simplify a process of formation by forming a current injection layer and a cap layer for an ohmic contact on the upper surface of a mesa part and current blocking layers in this order. CONSTITUTION:A mesa part composed of a P-type active layer 2 and a P-type cladding layer 3 and current blocking layers composed of P-type blocking layers 4 and N-type blocking layers 5 are formed on an N-type cladding layer The mesa part is buried in the current blocking layers. A current injection layer 6 is formed on the mesa part (P-type cladding layer 3) and the current blocking layers (N-type blocking layers 5) and a cap layer 7 for maintaining an ohmic contact is formed on the current injection layer 6. On the part of the surface of the cap layer 7 above the mesa part, an SiO2 film 8 is evaporated and an Au/Zn/Au film 9 which functions as an electrode and a reflective mirror is evaporated on the surface of the cap layer 7 including the surface of the SiO2 film 8. |
| 公开日期 | 1998-02-18 |
| 申请日期 | 1988-08-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83393]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 科学技術振興事業団 |
| 推荐引用方式 GB/T 7714 | 伊賀 健一,石川 徹,古沢 浩太郎,等. 面発光型半導体レーザ装置. JP2717213B2. 1997-11-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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