Manufacture of semiconductor device
文献类型：专利
| 作者 | TANAHASHI TOSHIYUKI |
| 发表日期 | 1991-10-01 |
| 专利号 | JP1991222386A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To protect a diffraction grating against deformation caused by a thermal treatment process by a method wherein an AlP crystal layer is formed on an AlGaInP crystal layer provided onto a semiconductor substrate, grooves are selectively provided so deep as to reach to the AlGaInP crystal to form a diffraction grating. CONSTITUTION:A P-type AlGaInP guide layer 4 is formed, for instance, as thick as 0.1mum or so, and a P-type AlP deformation preventing thin film 5 is formed, for instance, as thick as 50Angstrom or so through an MOVPE method. A resist film 6 is formed in stripes at a regular interval of 2700Angstrom through a photolithography technique. A partial chemical etching is carried out using the resist film 6 as a mask. The resist film 6 is adequately set in pitch of stripes and etching depth so as to form a diffraction grating 7 possessed of optional period and depth. Therefore, as a diffraction grating has a deformation preventive thin film at its top, it can be prevented from being deformed even if a second clad layer 8 is formed on its top through an MOVPE method, because an AlP crystal is hardly dissociated in a heat treatment as atoms of a III and a V group are strongly combined together in it. |
| 公开日期 | 1991-10-01 |
| 申请日期 | 1990-01-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83395]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | TANAHASHI TOSHIYUKI. Manufacture of semiconductor device. JP1991222386A. 1991-10-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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