Compound semiconductor element
文献类型：专利
| 作者 | SHIBATA ATSUSHI; HATADA KENZOU; SASAI YOUICHI; NAKAO ICHIROU; KIMURA SOUICHI |
| 发表日期 | 1984-06-27 |
| 专利号 | JP1984111384A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Compound semiconductor element |
| 英文摘要 | PURPOSE:To obtain the titled compound semiconductor element by which the loss of electric power is suppressed minor and, in addition, the area of the element is made smaller and the yield can be upgraded by a method wherein the collector layer of a bipolar transistor is used in common with the LD of a semiconductor laser and the LD to be used as a collector load is made into a structure which is controlled by corrector current, by arranging the bipolar transistor in longitudinal type to the LD of the semiconductor laser. CONSTITUTION:A quadrilayer 302 of InGaAsP is epitaxially grown on an N type InP substrate 30 After that, a P type InP layer 303 is epitaxially grown, and, in addition, a P type InGaAsP layer 304, the so-called cap layer 304, is grown. The back surface of the N type InP substrate 301 is performed an etching in order to grow epitaxially a buffer layer. Then, a P type InP layer 305, which is subjected to become the base layer, is epitaxially grown. Impurities are selectively diffused or implanted on the base layer 305 for forming an emitter layer 306. In this case, as the emitter layer 306 becomes an N type, an npn transistor is formed in longitudinal type to a P clad layer 303, an active layer 302 and an N clad layer 301, by which the LD is constituted, because the substrate 301 and the base layer 305, which are subjected to become the collector layer, are an N type and a P type respectively. |
| 公开日期 | 1984-06-27 |
| 申请日期 | 1982-12-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83396]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | SHIBATA ATSUSHI,HATADA KENZOU,SASAI YOUICHI,et al. Compound semiconductor element. JP1984111384A. 1984-06-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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