Semiconductor laser
文献类型：专利
| 作者 | YABUUCHI TAKATOSHI; YAMAMOTO SHIGERU |
| 发表日期 | 1992-09-24 |
| 专利号 | JP1992268781A |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which is high in output power, free from deformation under stress and the deterioration of an end face, and long in service life. CONSTITUTION:A current control layer 2, a first clad layer 7, an active layer 8, and a second clad layer 9 are successively laminated on a semiconductor substrate 1, where the current control layer 2 is composed of a stripe-like current injection part 4 which is separate from its end face 5 and side face and where ions are injected and a current blocking layer 3 located at its periphery, and the first and the second clad layer, 7 and 9, are provided so as to be flat. |
| 公开日期 | 1992-09-24 |
| 申请日期 | 1991-02-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83398]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | YABUUCHI TAKATOSHI,YAMAMOTO SHIGERU. Semiconductor laser. JP1992268781A. 1992-09-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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