Manufacture of semiconductor laser
文献类型：专利
| 作者 | IMAMOTO HIROSHI |
| 发表日期 | 1988-09-13 |
| 专利号 | JP1988220587A |
| 著作权人 | OMRON TATEISI ELECTRONICS CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser without dividing a crystalgrowth process into two, by a method wherein the (n 11) A plane is exposed, Si-doped AlSGaAs on GaAs is grown on it, a double heterojunction whose n-type clad layer is composed of Si-doped AlSGaAs is installed and, futhermore, an n-type cap layer is installed. CONSTITUTION:The (n 11) (where n =1-3) A plane is exposed by making a stripe-shaped groove or a slope on a p-type GaAs substrate 7 of the orientation of plane (100) or on a GaAs substrate whose surface layer is composed of a p-type GaAs layer; Si-doped GaAs or AlGaAs 6 is grown on the assembly by using a molecular beam epitaxial growth method; a double heterojunction structure whose n-type clad layer is composed of an Si-doped AlGaAs layer 3 and whose cap layer is composed of Sn-doped GaAs is installed on the assembly. By this setup, only the 1A plane becomes a p-type and the remaining flat part becomes an n-type; an internal electric-current constriction part is constituted at the groove or at the stepped central part; it is possible to manufacture a semiconductor laser of the internal electric-current constriction type with a single crystal-growth process. |
| 公开日期 | 1988-09-13 |
| 申请日期 | 1987-03-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83400]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRONICS CO |
| 推荐引用方式 GB/T 7714 | IMAMOTO HIROSHI. Manufacture of semiconductor laser. JP1988220587A. 1988-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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