Buried hetero structure semiconductor laser
文献类型：专利
| 作者 | SAKUMA ISAMU |
| 发表日期 | 1987-04-04 |
| 专利号 | JP1987073789A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried hetero structure semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a buried hetero structure semiconductor laser having excellent high frequency characteristics and high performance by providing a current block region in a stripe shaped by diffusing at the both sides of a mesa stripe region. CONSTITUTION:A P-type InP buffer layer 2, an InGaAsP active layer 3, an N-type InP clad layer 4 are sequentially laminated on a P-type InP substrate 1 having 100 surface in a multilayer film structure semiconductor wafer. The wafer is mesa etched deeper than the layer 3 in parallel with (011) direction to form two parallel grooves 30, 31 of 2mum of depth, thereby forming a mesa stripe 10 of 2mum width which contains the layer 3 for emitting and recombining the light. An N-type InP current block layer 5, a P-type InP current block layer 6 are laminated except the upper surface of the strip 10 on the substrate obtained in this manner, and an N-type InP buried layer 7 and an N-type InGaAsP electrode layer 8 ar grown on the entire surface. Then, after an SiO2 film is formed, Zn impurity is diffused in stripe shape in the grooves 30, 31 as selectively diffusing mask, and the SiO2 film is then removed. |
| 公开日期 | 1987-04-04 |
| 申请日期 | 1985-09-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83401]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | SAKUMA ISAMU. Buried hetero structure semiconductor laser. JP1987073789A. 1987-04-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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