Semiconductor laser device
文献类型：专利
| 作者 | KOMATSU HIROSHI; OSHIMA HIROYUKI; IWANO HIDEAKI; TSUNEKAWA YOSHIFUMI |
| 发表日期 | 1986-06-16 |
| 专利号 | JP1986128589A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To form a semiconductor laser device, which can elevate an optical output and can increase density, by optically coupling each laser beam generated from several layer of a plurality of active layers mutually in a device and reciprocally making them to interfere. CONSTITUTION:When currents are flowed into a laser layer while bringing a metallic electrode 14 to positive potential and metallic electrodes 12 and 13 to negative potential, holes through P type clad layers 7, 8 and electroddes through a substrate 1 and layers 2, 6, 10 are injected into active layers 3, 5 respectively. The transition of injected carriers is generated in several active layer and beams are emitted, and beams reciprocate in striped cavities, thus generating laser oscillation. The forbidden band width of a clad layer 4 is made larger than the active layers, a refractive index thererof is made approximately the same and thickness thereof is adjusted properly at that time. Accordingly, beams in the active layer 3 are induced in the active layer 5, and beams in the active layer 5 also induce beams in the active layer 3 similarly, thus making an interference effect by optical coupling to appear. |
| 公开日期 | 1986-06-16 |
| 申请日期 | 1984-11-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83403]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | KOMATSU HIROSHI,OSHIMA HIROYUKI,IWANO HIDEAKI,et al. Semiconductor laser device. JP1986128589A. 1986-06-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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