Semiconductor laser array device
文献类型：专利
| 作者 | MATSUMOTO AKIHIRO; MATSUI KANEKI; HOSOBANE HIROYUKI |
| 发表日期 | 1989-10-25 |
| 专利号 | JP1989268180A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser array device |
| 英文摘要 | PURPOSE:To suppress heat generation, and obtain a device which can stably oscillate with a high output with a long life by forming the thickness of a part opposing the part between stripe regions of a first clad layer and a part opposing the outside of each stripe region of an outermost side near a laser light emitting end face thicker than that at the center. CONSTITUTION:Since a first clad layer 17 becomes thicker at the part between stripe regions 17a and the outer parts of the outermost regions 17a in the vicinity of the laser light emitting end face than a center except the vicinity of the laser light emitting end face, the quantity of a light passing the thick layer 17 is reduced, and the quantity of light absorbed in an N-type Al0.1Ga0.9As current narrowing layer 11 is decreased. As a result, the heat generation due to the light absorption of the layer 11 is suppressed, and a laser light can stably oscillates with high output over a long period of time. |
| 公开日期 | 1989-10-25 |
| 申请日期 | 1988-04-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83405]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | MATSUMOTO AKIHIRO,MATSUI KANEKI,HOSOBANE HIROYUKI. Semiconductor laser array device. JP1989268180A. 1989-10-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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