Semiconductor light-emitting device
文献类型：专利
| 作者 | SEKII HIROSHI |
| 发表日期 | 1988-03-05 |
| 专利号 | JP1988052495A |
| 著作权人 | OMRON TATEISI ELECTRONICS CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE: To eliminate a process to produce an insulating film and a diffusion region by a method wherein an active layer whose refractive index is larger than that of a clad layer is buried into the clad layer formed on a part of a substrate and a current path which is extended in the transverse direction from the active layer is formed on a remaining part of the substrate so that an electrode is provided at this current path and on the clad layer. CONSTITUTION:On the right half on a semi-insulating GaAs substrate 1 an n-GaO.3Al0.7As clad layer 2 and an n-Ga0.7Al0.3 As clad layer 4 are forme according to this order. Between both clad layers 2 and 4, a p-GaAs active layer 3a is formed in such a way that it is buried in between. On the left half of the substrate 1 an electrode-mounting layer 3c made of p-GaAs is formed and is connected with the active layer 3a via a current path 3b. This current path is also made of p-GaAs. This device is constructed in such a way that an electric current can flow directly to the active layer 3a from an electrode 5 via the path 3b, and the active layer 3a is buried between the clad layers 2, 4 whose refractive index is small (whose energy gap is bigger). |
| 公开日期 | 1988-03-05 |
| 申请日期 | 1986-08-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83406]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRONICS CO |
| 推荐引用方式 GB/T 7714 | SEKII HIROSHI. Semiconductor light-emitting device. JP1988052495A. 1988-03-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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