Semiconductor laser
文献类型：专利
| 作者 | UOMI, KAZUHISA; YOSHIZAWA, MISUZU; ONO, YUICHI; CHINONE, NAOKI; KAJIMURA, TAKASHI |
| 发表日期 | 1994-03-23 |
| 专利号 | EP0227426B1 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A semiconductor laser with an active layer (3) between two cladding layers (2,4) has grooves (30) formed in the substrate (1) below the lower cladding layer (2) and corresponding diffusion regions (6) with additional diffusion regions (6) between the grooves. This defines stripe regions in the laser device. Electrodes (7) are associated with the diffusion regions (6) forming part of the stripe regions, and electrodes (8) are associated with the other diffusion regions, in the gaps between the stripes. By applying a current to the electrodes 8 only, the fundamental supermode of the laser is excited, whilst by applying a current to the electrodes 7 only, a supermode of the highest order is excited. Since these two supermodes cause the emission of laser radiation at different angles, the angle of laser radiation from the device may be changed by changing the pattern of current to the electrodes (7,8). Other embodiments achieve a change in the direction of the laser radiation by the use of electrodes with gaps, and by the use of electrodes outside the part of the device containing the stripe regions. |
| 公开日期 | 1994-03-23 |
| 申请日期 | 1986-12-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83407]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | UOMI, KAZUHISA,YOSHIZAWA, MISUZU,ONO, YUICHI,et al. Semiconductor laser. EP0227426B1. 1994-03-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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