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文献类型：专利
| 作者 | HIRANO RYOICHI |
| 发表日期 | 1986-11-04 |
| 专利号 | JP1986050373B2 |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To smoothen the surface of an epitaxial layer grown on a flat substrate by slowly melting the surface of a compound semiconductor substrate to be epitaxially grown in liquid phase prior to the growth with a solution having the prescribed solubility, thereby obtaining a preferably flat substrate. CONSTITUTION:An InP crystalline substrate 1 of planar azimuth (100) to be grown in a recess formed on the surface of a slide board 8 is contained in the recess, and a melting reservoir 9 is placed on the board 8. Then, a flattening molten liquid 11 prepared with the prescribed quantities of InAs and GaAs in molten In liquid is filled in one of the reservoirs formed in the reservoir 9, an InP crystal 10 having a planar azimuth (111) is floated on the liquid, and epitaxially growing liquid 12 is contained in the other reservoirs. Thus, it is heated to approx. 65 deg.C in H2 atmosphere, is retained for approx. 1hr, and crystal 10 is dissolved to saturated in the liquid 1 Thereafter, the surface of the substrate 1 is dissolved with the liquid 11 becoming unsaturated at approx. 3 deg.C with respect to the substrate 1, thereby flattening the surface. |
| 公开日期 | 1986-11-04 |
| 申请日期 | 1980-09-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83414]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HIRANO RYOICHI. -. JP1986050373B2. 1986-11-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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