Semiconductor laser device
文献类型：专利
| 作者 | OBE ISAO; TODOROKI SATORU |
| 发表日期 | 1987-11-06 |
| 专利号 | JP1987254480A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable reducing an astigmatic difference by increasing the reflectivity of laser light on the curved wave surface of a fundamentally horizontal transverse mode and by reducing the above-mentioned reflectivity in a region where the fundamentally horizontal transverse mode is near a plane wave. CONSTITUTION:An n-GaAs semiconductor block layer 2 is formed on a p-GaAs semiconductor substrate 1 except a channel region, then a clad layer 3 which is a p-GaAlAs semiconductor optical confinement layer, an (n) or (p) or undope GaAlAs semiconductor active layer 4, a clad layer 5 which is an n-GaAlAs semiconductor optical confinement layer and an n-GaAs semiconductor cap layer 6 are formed in sequence by a well known method and at last, an electrode 7 is provided on the face of the n-GaAs semiconductor cap layer 6 and on the rear of the p-GaAs semiconductor substrate 1 each by evaporation. In this case, the thickness of the semiconductor clad layer 3 is made 0.4mum to cause pulsation. The size of a light emitting region 10 provided on a protection film 9 is made equal to or less than the width of a channel in the horizontal direction for junction and at least equal to or more than the thickness of the semiconductor active layer 4 in the vertical direction for junction and the center of the light emitting region 10 is set to a position where laser light intensity is made maximum. |
| 公开日期 | 1987-11-06 |
| 申请日期 | 1986-04-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83416]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OBE ISAO,TODOROKI SATORU. Semiconductor laser device. JP1987254480A. 1987-11-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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