Semiconductor laser device
文献类型：专利
| 作者 | HONDA, SHOJI; SHONO, MASAYUKI; HIROYAMA, RYOJI; BESSHO, YASUYUKI; KASE, HIROYUKI; NISHIDA, TOYOZO; UETANI, TAKAHIRO; SUZUKI, JUNKO |
| 发表日期 | 1996-09-10 |
| 专利号 | US5555271 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | On an n-type GaAs semiconductor substrate, an n-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate, an active layer and a p-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate are formed, and a p-type barrier cladding layer formed of AlGaInP system crystal or AlInP system crystal is provided in the p-type cladding layer. The p-type barrier cladding layer has a thickness through which electrons are almost not transmitted, has tensile strain, and also has band gap energy larger than that of the p-type cladding layer. |
| 公开日期 | 1996-09-10 |
| 申请日期 | 1994-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83420]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | HONDA, SHOJI,SHONO, MASAYUKI,HIROYAMA, RYOJI,et al. Semiconductor laser device. US5555271. 1996-09-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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