Semiconductor light emitting device
文献类型：专利
| 作者 | YOKOZUKA TATSUO; TAKAMORI AKIRA |
| 发表日期 | 1991-11-26 |
| 专利号 | JP1991265182A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To lengthen lifetime within an oscillation wavelength range of 0.68-0.78mum and facilitate practical use by forming clad layers, which is lattice- matched with a GaAs substrate and the band gaps of which are at least 0.25eV larger than that of an active layer. CONSTITUTION:An n-AlGaIn clad layer 6, an undoped GaInP active layer 5, a p-AlGaIn clad layer 4, a p-GaAs ohmic contact layer 3, an insulating layer 2, and a p-type electrode 1 are formed on a GaAs substrate 7. Compositions of the layers 4 and 6 are lattice-matched with the substrate 7 and the layer 5 is composed of GayIn1-yP (0<=y<=0.5) which contain a higher rate of indium than Ga0.5In0.5P which is a lattice-matched composition. The band gaps of the clad layers 4 and 6 are at least 0.25eV larger than that of the layer 5. Laitice- unmatching of the layer 5 with the substrate 7 and regulation of band gap energy provide an oscillation wavelength of 0.68-0.78mum and the structure of the layers 4-6 facilitates manufacture, reduces size, and lowers power consumption. |
| 公开日期 | 1991-11-26 |
| 申请日期 | 1990-03-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83433]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | YOKOZUKA TATSUO,TAKAMORI AKIRA. Semiconductor light emitting device. JP1991265182A. 1991-11-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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