半導体レ-ザ装置の製造方法
文献类型：专利
| 作者 | 宇野 智昭; 芹澤 晧元 |
| 发表日期 | 1995-04-26 |
| 专利号 | JP1995038486B2 |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ装置の製造方法 |
| 英文摘要 | PURPOSE:To simplify a manufacturing process, and to improve the yield of an element while enabling excellent single longitudinal mode oscillation having the large coupling coefficient of beams and a diffraction grating by forming a semiconductor laser device with the diffraction grating through two-times of crystal growth processes by using a vapor crystal growth method. CONSTITUTION:A clad layer 2, an active layer 3 and a waveguide layer 4 are crystallized onto a substrate 1 in succession. A diffraction grating pattern is shaped onto the waveguide layer 4 through a two-beam interference exposure method, and the surface of the waveguide layer 4 is etched selectively by the diffraction grating pattern, thus forming a diffraction grating 5. Striped patterns are shaped to the surface of the waveguide layer 4, on which the diffraction grating 5 is formed, in the direction vertical to grooves for the diffraction grating. The waveguide layer 4 and the active layer 3 are etched selectively, employing the striped patterns as masks, and a laser resonator 6 is shaped. A current confinement layer 7, a current confinement layer 8, a clad layer and a contact layer 9 are crystal-grown in succession by using an MO-VPE method. Zn is thermally diffused to the surface of the contact layer 9 until Zn reaches to the current confinement layer 7, employing an silicon nitride film with a striped opening as a mask, thus forming a Zn diffusion region 10. |
| 公开日期 | 1995-04-26 |
| 申请日期 | 1986-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83443]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | 宇野 智昭,芹澤 晧元. 半導体レ-ザ装置の製造方法. JP1995038486B2. 1995-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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