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文献类型：专利
| 作者 | YANO MITSUHIRO |
| 发表日期 | 1987-09-12 |
| 专利号 | JP1987043355B2 |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To allow laser beam to deflect by the selective impression of voltage on a deflecting electrode, by providing the electrode on a semiconductor layer surrounding the both transverse sides of an active layer in a stripe type device of burried type double hetero structure. CONSTITUTION:An n type GaAlAs layer 2, a p type GaAl clad layer 3, GaAs active layer 4 and p type GaAlAs layer 5 are provided successively on an n type GaAs substrate 1, and a p type GaAlAs layer 6 for the prevention of current is provided on a part of an n type layer 2 with an n type GaAlAs layer 7 for shutting up lateral directional light provided thereon to constitute double hetero burried type laser. The mode of laser oscillation can be varied to add the function for light deflection by providing deflecting electrodes 11, 13 on the layer 7 with the impression of required voltage thereon. Thus, a monolithic deflector on laser miniaturizes the device and facilitating a mutual adjustment. |
| 公开日期 | 1987-09-12 |
| 申请日期 | 1981-04-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83444]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YANO MITSUHIRO. -. JP1987043355B2. 1987-09-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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