Semiconductor laser
文献类型：专利
| 作者 | UKO KATSUYUKI; SAKAI KAZUO; MATSUSHIMA YUICHI; AKIBA SHIGEYUKI |
| 发表日期 | 1988-12-06 |
| 专利号 | JP1988299291A |
| 著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To make an oscillation wavelength variable by mutually adjusting a refractive index of a region by a method wherein a light-emitting region and a waveguide region are integrated and a filter region equipped with a diffraction grating having a filtering function is installed in one part of the waveguide region or one part extended from the region. CONSTITUTION:A laser resonator is composed of a light-emitting region A, a non-light- emitting region (a waveguide region B and a filter region C) and a pair of reflection end faces 12, 12'; there are a number of resonance modes in accordance with a resonator length L which is an effective device length experienced when the light is propagated essentially. A wavelength width depends on a coupling coefficient and a length of a diffraction grating, on a phase shift amount, on a phase shift position and the like; it is possible to pass only one resonance wavelength lambda0 selectively. If a cycle of the diffraction grating 3 is selected, only a wavelength of a resonance wavelength lambda0 is confined strongly inside a resonator; as a result, it is possible to obtain an oscillation at a single wavelength of the resonance wavelength lambda0. By using a semiconductor laser it is possible to satisfy a requirement to operate at a single wavelength and to lengthen the resonator length; it is possible to realize a narrow oscillation line width by the long resonator length. |
| 公开日期 | 1988-12-06 |
| 申请日期 | 1987-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83445]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
| 推荐引用方式 GB/T 7714 | UKO KATSUYUKI,SAKAI KAZUO,MATSUSHIMA YUICHI,et al. Semiconductor laser. JP1988299291A. 1988-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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