光半導体装置
文献类型：专利
| 作者 | 下山 謙司; 後藤 秀樹 |
| 发表日期 | 2001-10-19 |
| 专利号 | JP3241360B2 |
| 著作权人 | 三菱化学株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 光半導体装置 |
| 英文摘要 | PURPOSE:To prevent voids and stresses between the stripe layer and buried re-growth layers of an optical semiconductor device by a method wherein the mesa surface in contact with the buried re-growth layers is so formed as to have a single surface index. CONSTITUTION:An undoped AlxGa1-xAs cladding layer, an AlyGa1-yAs active layer 103, an AlxGa1-xAs cladding layer 104 and an undoped GaAs cap layer are successively built up on a semi-insulating GaAs substrate by epitaxial growth. A recess for forming buried re-growth layers is formed by reactive gas etching and, immediately after that, an n-type AlsGa1-sAs cladding layer and a p-type GaAs contact layer are re-built up. By applying the gas etching like this, a mesa surface having a single surface index can be formed and, if the stripe direction is selected to be , a mesa surface 111 is obtained. With this constitution, voids and stresses between the stripe layer and the buried re-growth layers are not created. |
| 公开日期 | 2001-12-25 |
| 申请日期 | 1989-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83448]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱化学株式会社 |
| 推荐引用方式 GB/T 7714 | 下山 謙司,後藤 秀樹. 光半導体装置. JP3241360B2. 2001-10-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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